ion beam machine in indonesian

introduction to ion beam etching with the em tic 3x | learn & share | leica microsystems

In this article you can learn how to optimize the preparation quality of your samples by using the ion beam etching method with the EM TIC 3X ion beam milling machine. A short introduction of the instrument explains how the flexible setup of the EM TIC 3X gives you the opportunity to prepare samples for various investigation areas. Understand the basic principles of the ion beam etching method to obtain high resolution SEM images for various applications. Get to know the technical working principles of the unique triple ion beam system of the EM TIC 3X and how it helps you to achieve high surface quality of cross section and planar sample preparation for SEM and LM. The results of two soft and hard to prepare samples are shown which were successfully prepared with this method using the EM TIC 3X.

The EM TIC 3X is a broad ion beam milling unit that is used to prepare sample cross sections as well as planar samples for scanning electron microscopy (SEM), light microscopy (LM), microstructure analysis (EDS, WDS, Auger, EBSD) and atomic force microscopy (AFM) investigations. The instrument is equipped with a triple ion beam system and can process large surface areas of almost any material at room temperature or cryo.

Standard stage: prepare a wide range of samples with different sizes, shapes and materialsCooling stage: prevents thermally-cooling sensitive samples from being destroyed by overheatingMultiple sample stage: prepare at least three samples successively without user interaction guaranteeing a high-level sample throughput.Rotary stage: for flat milling or ion beam polishing

Ion Beam Etching, also known as Ion Beam Milling or Ion Milling, is the most widely-used etching method for preparing solid state samples for scanning electron microscopy (SEM) applications. In this process, the sample material is bombarded with high-energy argon ion beams in a high vacuum chamber. The top layer of the material is removed by high energy ions to achieve a defect-free sample surface. The ion energy and milling angle depend on the corresponding application and can be adjusted accordingly. It is also possible to improve the quality of mechanically polished surfaces via a final ion polishing process. The surfaces of samples can be cleaned, polished and have their contrast enhanced using ion milling techniques. These techniques are used to obtain high resolution SEM images for various applications such as failure analysis and to perform surface sensitive analyses such as EBSD for material characterization.

The triple ion source of the EM TIC 3X consists of three independent controllable saddle-field ion guns. The ion energy is adjustable between 1 to 10 keV. The ion source will be fed with a process gas, preferably Argon. A high voltage (1 to 10 kV) will be applied on the anode. The cathodes and Wehnelt cylinders are on earth potential. Due to the electrical field between anode and cathode the process gas will be ionized (Ar+) and the plasma ignites. Positive charged ions will be accelerated towards the cathodes and generate electrons. This bombardment leads to an abrasion of the cathode. Negative charged electrons will be accelerated towards the anode and collide with gas atoms and generate ions. Due to the shape of the electrical field between anode and Wehnelt cylinders (saddle field) two ion beams are created and accelerated towards both cathodes. One beam is blocked by the (blind) rear side cathode. The other beam will be led through the beam exit at the front side cathode. The energy of the ions coming out matches the acceleration voltage.

To produce cross sections for scanning electron microscopy (SEM), the sample is covered with a sharp-edged mask such that only 50100 m of the sample material is exposed above the mask. The three ion beams intersect at the center of the mask edge and strike the uncovered material and remove it to produce a sample cross-section with a high surface quality. The design of the ion gun develops a milling rate of 300 m/hour (Si 10 kV, 3.5 mA, 100 m from edge). This unique technique produces a vast cross sectioning area of larger than 4 1 mm at a high material removal rate to achieve a high-quality surface finish.

For flat milling (or ion beam polishing) the rotary stage is used. Due to the gun assembly and additional lateral movement of the sample, a uniform, high quality area larger than 25 mm diameter can be prepared. This preparation process is used to clean, polish or enhance the contrast of a mechanically or chemically polished surface with the goal of removing fine scratches, abrasive material and smearing artifacts.

ZINC ON STEEL: Zinc is very soft compared to steel and would become smeared during mechanical polishing. Ion milling is a known technique to analyze the thickness of zinc layer on galvanized steels. After using the EM TIC 3X, a cleanly etched surface can be observed. The zinc layer is free of artifacts and the grain structure as well as interface layer are clearly visible.

SOLDER BUMP: The semiconductor structure with solder bumps is a very soft material that is rarely prepared successfully using conventional mechanical polishing. Ion beam milling is the preferred method of preparing such samples. To avoid shrinkage of the individual components in the solder bump, the sample was protected by liquid nitrogen and kept cool during ion milling. Results show a smooth and clean surface and the structural details in the solder bump are easily recognizable.

ion beam machining: working, accuracy, advantages/disadvantags

In this post, you learn what is Ion beam machining, Its working, advantages and disadvantage.Ion-Beam Machining (IBM)Contents show1. Ion-Beam Machining (IBM)1.1. Ion Beam Machining Accuracy1.2. Applications of Ion-Beam Machining1.3. Advantages and Disadvantages of Ion Beam MachiningIBM or etching is generally a surface finishing process in which the material removal takes place by sputtering of ions. The process is different from electric discharge, electron beam, laser and plasma arc machining in that the process does not depend on heating of the workpiece to the point of evaporation.This sputter etching mechanism is very simple. It consists in bombarding the work with accelerated ions which collide with the surface atoms of the work. Each bombarding ions, as a result of collisions, dislodges surface atoms by transferring kinetic energy from itself to the atoms of the surface layer.Ion Beam Machining DiagramIt consists of an electron gun which discharges free electrons into a chamber filled with argon gas. The gas is then ionized by the electrons. The top of the chamber is called an Ion-Beam generating apparatus. At the other end, the workpiece is fixed to a table which can be oscillated and rotated so that different points on the work surface can be subjected to ion-beam.Read also: Ultrasonic Machining (USM): Parts, Working Principle, Advantages, Application and MoreIon Beam Machining AccuracyPractical etching rates vary up to 2000 A (2 x 10-4 mm) per min. The accuracy of the etching process is considerably high mainly due to the small amount of material removal. Tolerances in the vicinity of + 50 (+ 5 x 10-mm) are possible.Applications of Ion-Beam MachiningIt is applied mostly in micro-machining (etching) of electronic components like computer parts, figuring optical surfaces and for the precision fabrication of fine wire dies in refractory materials. Typical materials that can be etched include glass, alumina, quartz, crystals, silica, agates, porcelain, cermets. and numerous metals and oxides.Advantages and Disadvantages of Ion Beam MachiningAdvantagesIon-beam has many advantages which include:The process is almost universal.No chemical reagents or etching compounds are required.There is no undercutting as with another chemical etching process.Etching rates are easily controlled.DisadvantagesHowever, the process has many disadvantages which are as follows:It is relatively expensive.Etching rates are slow.Although virtually no heat is generated there is little possibility of some thermal or radiation damage.That it, Thanks for reading, if you have any questions about ion beam machining ask in the comments section. If you found this article helpful share with your friends.You may like this articles:Laser Beam Machining (LBM): Parts, Working Principle, Applications, Limitations and moreAbrasive Jet Machining (AJM): Parts, Working Principle, Advantages & Applications

IBM or etching is generally a surface finishing process in which the material removal takes place by sputtering of ions. The process is different from electric discharge, electron beam, laser and plasma arc machining in that the process does not depend on heating of the workpiece to the point of evaporation.This sputter etching mechanism is very simple. It consists in bombarding the work with accelerated ions which collide with the surface atoms of the work. Each bombarding ions, as a result of collisions, dislodges surface atoms by transferring kinetic energy from itself to the atoms of the surface layer.Ion Beam Machining DiagramIt consists of an electron gun which discharges free electrons into a chamber filled with argon gas. The gas is then ionized by the electrons. The top of the chamber is called an Ion-Beam generating apparatus. At the other end, the workpiece is fixed to a table which can be oscillated and rotated so that different points on the work surface can be subjected to ion-beam.Read also: Ultrasonic Machining (USM): Parts, Working Principle, Advantages, Application and MoreIon Beam Machining AccuracyPractical etching rates vary up to 2000 A (2 x 10-4 mm) per min. The accuracy of the etching process is considerably high mainly due to the small amount of material removal. Tolerances in the vicinity of + 50 (+ 5 x 10-mm) are possible.Applications of Ion-Beam MachiningIt is applied mostly in micro-machining (etching) of electronic components like computer parts, figuring optical surfaces and for the precision fabrication of fine wire dies in refractory materials. Typical materials that can be etched include glass, alumina, quartz, crystals, silica, agates, porcelain, cermets. and numerous metals and oxides.Advantages and Disadvantages of Ion Beam MachiningAdvantagesIon-beam has many advantages which include:The process is almost universal.No chemical reagents or etching compounds are required.There is no undercutting as with another chemical etching process.Etching rates are easily controlled.DisadvantagesHowever, the process has many disadvantages which are as follows:It is relatively expensive.Etching rates are slow.Although virtually no heat is generated there is little possibility of some thermal or radiation damage.That it, Thanks for reading, if you have any questions about ion beam machining ask in the comments section. If you found this article helpful share with your friends.You may like this articles:Laser Beam Machining (LBM): Parts, Working Principle, Applications, Limitations and moreAbrasive Jet Machining (AJM): Parts, Working Principle, Advantages & Applications

This sputter etching mechanism is very simple. It consists in bombarding the work with accelerated ions which collide with the surface atoms of the work. Each bombarding ions, as a result of collisions, dislodges surface atoms by transferring kinetic energy from itself to the atoms of the surface layer.Ion Beam Machining DiagramIt consists of an electron gun which discharges free electrons into a chamber filled with argon gas. The gas is then ionized by the electrons. The top of the chamber is called an Ion-Beam generating apparatus. At the other end, the workpiece is fixed to a table which can be oscillated and rotated so that different points on the work surface can be subjected to ion-beam.Read also: Ultrasonic Machining (USM): Parts, Working Principle, Advantages, Application and MoreIon Beam Machining AccuracyPractical etching rates vary up to 2000 A (2 x 10-4 mm) per min. The accuracy of the etching process is considerably high mainly due to the small amount of material removal. Tolerances in the vicinity of + 50 (+ 5 x 10-mm) are possible.Applications of Ion-Beam MachiningIt is applied mostly in micro-machining (etching) of electronic components like computer parts, figuring optical surfaces and for the precision fabrication of fine wire dies in refractory materials. Typical materials that can be etched include glass, alumina, quartz, crystals, silica, agates, porcelain, cermets. and numerous metals and oxides.Advantages and Disadvantages of Ion Beam MachiningAdvantagesIon-beam has many advantages which include:The process is almost universal.No chemical reagents or etching compounds are required.There is no undercutting as with another chemical etching process.Etching rates are easily controlled.DisadvantagesHowever, the process has many disadvantages which are as follows:It is relatively expensive.Etching rates are slow.Although virtually no heat is generated there is little possibility of some thermal or radiation damage.That it, Thanks for reading, if you have any questions about ion beam machining ask in the comments section. If you found this article helpful share with your friends.You may like this articles:Laser Beam Machining (LBM): Parts, Working Principle, Applications, Limitations and moreAbrasive Jet Machining (AJM): Parts, Working Principle, Advantages & Applications

It consists of an electron gun which discharges free electrons into a chamber filled with argon gas. The gas is then ionized by the electrons. The top of the chamber is called an Ion-Beam generating apparatus. At the other end, the workpiece is fixed to a table which can be oscillated and rotated so that different points on the work surface can be subjected to ion-beam.Read also: Ultrasonic Machining (USM): Parts, Working Principle, Advantages, Application and MoreIon Beam Machining AccuracyPractical etching rates vary up to 2000 A (2 x 10-4 mm) per min. The accuracy of the etching process is considerably high mainly due to the small amount of material removal. Tolerances in the vicinity of + 50 (+ 5 x 10-mm) are possible.Applications of Ion-Beam MachiningIt is applied mostly in micro-machining (etching) of electronic components like computer parts, figuring optical surfaces and for the precision fabrication of fine wire dies in refractory materials. Typical materials that can be etched include glass, alumina, quartz, crystals, silica, agates, porcelain, cermets. and numerous metals and oxides.Advantages and Disadvantages of Ion Beam MachiningAdvantagesIon-beam has many advantages which include:The process is almost universal.No chemical reagents or etching compounds are required.There is no undercutting as with another chemical etching process.Etching rates are easily controlled.DisadvantagesHowever, the process has many disadvantages which are as follows:It is relatively expensive.Etching rates are slow.Although virtually no heat is generated there is little possibility of some thermal or radiation damage.That it, Thanks for reading, if you have any questions about ion beam machining ask in the comments section. If you found this article helpful share with your friends.You may like this articles:Laser Beam Machining (LBM): Parts, Working Principle, Applications, Limitations and moreAbrasive Jet Machining (AJM): Parts, Working Principle, Advantages & Applications

Read also: Ultrasonic Machining (USM): Parts, Working Principle, Advantages, Application and MoreIon Beam Machining AccuracyPractical etching rates vary up to 2000 A (2 x 10-4 mm) per min. The accuracy of the etching process is considerably high mainly due to the small amount of material removal. Tolerances in the vicinity of + 50 (+ 5 x 10-mm) are possible.Applications of Ion-Beam MachiningIt is applied mostly in micro-machining (etching) of electronic components like computer parts, figuring optical surfaces and for the precision fabrication of fine wire dies in refractory materials. Typical materials that can be etched include glass, alumina, quartz, crystals, silica, agates, porcelain, cermets. and numerous metals and oxides.Advantages and Disadvantages of Ion Beam MachiningAdvantagesIon-beam has many advantages which include:The process is almost universal.No chemical reagents or etching compounds are required.There is no undercutting as with another chemical etching process.Etching rates are easily controlled.DisadvantagesHowever, the process has many disadvantages which are as follows:It is relatively expensive.Etching rates are slow.Although virtually no heat is generated there is little possibility of some thermal or radiation damage.That it, Thanks for reading, if you have any questions about ion beam machining ask in the comments section. If you found this article helpful share with your friends.You may like this articles:Laser Beam Machining (LBM): Parts, Working Principle, Applications, Limitations and moreAbrasive Jet Machining (AJM): Parts, Working Principle, Advantages & Applications

Practical etching rates vary up to 2000 A (2 x 10-4 mm) per min. The accuracy of the etching process is considerably high mainly due to the small amount of material removal. Tolerances in the vicinity of + 50 (+ 5 x 10-mm) are possible.Applications of Ion-Beam MachiningIt is applied mostly in micro-machining (etching) of electronic components like computer parts, figuring optical surfaces and for the precision fabrication of fine wire dies in refractory materials. Typical materials that can be etched include glass, alumina, quartz, crystals, silica, agates, porcelain, cermets. and numerous metals and oxides.Advantages and Disadvantages of Ion Beam MachiningAdvantagesIon-beam has many advantages which include:The process is almost universal.No chemical reagents or etching compounds are required.There is no undercutting as with another chemical etching process.Etching rates are easily controlled.DisadvantagesHowever, the process has many disadvantages which are as follows:It is relatively expensive.Etching rates are slow.Although virtually no heat is generated there is little possibility of some thermal or radiation damage.That it, Thanks for reading, if you have any questions about ion beam machining ask in the comments section. If you found this article helpful share with your friends.You may like this articles:Laser Beam Machining (LBM): Parts, Working Principle, Applications, Limitations and moreAbrasive Jet Machining (AJM): Parts, Working Principle, Advantages & Applications

It is applied mostly in micro-machining (etching) of electronic components like computer parts, figuring optical surfaces and for the precision fabrication of fine wire dies in refractory materials. Typical materials that can be etched include glass, alumina, quartz, crystals, silica, agates, porcelain, cermets. and numerous metals and oxides.Advantages and Disadvantages of Ion Beam MachiningAdvantagesIon-beam has many advantages which include:The process is almost universal.No chemical reagents or etching compounds are required.There is no undercutting as with another chemical etching process.Etching rates are easily controlled.DisadvantagesHowever, the process has many disadvantages which are as follows:It is relatively expensive.Etching rates are slow.Although virtually no heat is generated there is little possibility of some thermal or radiation damage.That it, Thanks for reading, if you have any questions about ion beam machining ask in the comments section. If you found this article helpful share with your friends.You may like this articles:Laser Beam Machining (LBM): Parts, Working Principle, Applications, Limitations and moreAbrasive Jet Machining (AJM): Parts, Working Principle, Advantages & Applications

Ion-beam has many advantages which include:The process is almost universal.No chemical reagents or etching compounds are required.There is no undercutting as with another chemical etching process.Etching rates are easily controlled.DisadvantagesHowever, the process has many disadvantages which are as follows:It is relatively expensive.Etching rates are slow.Although virtually no heat is generated there is little possibility of some thermal or radiation damage.That it, Thanks for reading, if you have any questions about ion beam machining ask in the comments section. If you found this article helpful share with your friends.You may like this articles:Laser Beam Machining (LBM): Parts, Working Principle, Applications, Limitations and moreAbrasive Jet Machining (AJM): Parts, Working Principle, Advantages & Applications

However, the process has many disadvantages which are as follows:It is relatively expensive.Etching rates are slow.Although virtually no heat is generated there is little possibility of some thermal or radiation damage.That it, Thanks for reading, if you have any questions about ion beam machining ask in the comments section. If you found this article helpful share with your friends.You may like this articles:Laser Beam Machining (LBM): Parts, Working Principle, Applications, Limitations and moreAbrasive Jet Machining (AJM): Parts, Working Principle, Advantages & Applications

That it, Thanks for reading, if you have any questions about ion beam machining ask in the comments section. If you found this article helpful share with your friends.You may like this articles:Laser Beam Machining (LBM): Parts, Working Principle, Applications, Limitations and moreAbrasive Jet Machining (AJM): Parts, Working Principle, Advantages & Applications

Saif M. is a Mechanical Engineer by profession. He completed his engineering studies in 2014 and is currently working in a large firm as Mechanical Engineer. He is also an author and editor at www.theengineerspost.com...

ion beam etching machine : hitachi high-tech global

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ion beam milling systems | products | leica microsystems

When material specimen surfaces are prepared for SEM or incident light microscopy, the specimen usually undergoes multiple processes until the layer or surface to be analyzed is machined with precision. Leica Microsystems workflow solutions for solid state technology cover all steps required for demanding high-quality sample preparation.

While the Leica EM TXP unites all steps of pre-preparation in one instrument, the Leica EM TIC 3X carries out the final, high quality surface finishing for almost any material. Connecting with the Leica EM VCT docking configuration, the sample can then be transferred into the (cryo) SEM under optimal conditions.

The Ion Beam Milling technique, also known as Ion Beam Etching, is used to achieve a well-prepared sample surface quality for high resolution imaging and analysis. It removes residual artefacts from mechanical cutting and polishing. The ion polished cross-sections and planar samples prepared by Ion Beam Etching can be used for electron microscopy imaging as well as microstructural analysis applications such as EDS, WDS, Auger and EBSD.

The EM TIC 3X Milling Machine offers triple ion beams that speed up the preparation process significantly and achieve to reveal finest details and structures on sample surfaces. Watch the video and see how to cut the preparation time for IC gold wire bonding using the Target Surfacing System EM TXP and the EM TIC 3X Ion Beam Milling System.

Preparation often begins with a need to accurately cut, grind and polish the surface prior to ion beam milling and metal/carbon coating. With the Leica EM TXP target preparation system all required machining steps can be completed in one instrument from diamond cutting and milling to polishing.

The unique broad ion beam milling system of the Leica EM TIC 3X is the system of choice for EDS, WDS, Auger and EBSD, because ion beam milling is often found to be the only method capable of achieving high quality cross-sections and planed surfaces of almost any material. The process reveals the internal structures of a sample whilst minimizing deformation or damage.

ion beam etching & milling (ibe) - oxford instruments

Ion Beam Etching (or Milling with inert gases) is achieved by directing a beam of charged particles (ions) at a substrate with a suitably patterned mask in a high vacuum chamber. It enables highly directional beams of ions whose space-charge is neutralised by electrons from the neutraliser - to control the etched sidewall profile as well as radial uniformity optimisation and feature shaping during nanopatterning notably using the tilt angle to the beam with on-axis rotation for axisymmetry.

On the other hand, angled features can be created by the unique ability to tilt the sample (without rotation) altering the direction of impact of the ion beam. In both cases, the etch process can be assisted by chemistry (RIBE and CAIBE) using reactive gases to enhance both etch rates and selectivity to a mask.

Ion beam etching can be applied in two ways: using inert ions for a physical etching or milling process or using RIBE/CAIBE with reactive ion species to increase differential material etch rates with a chemical/reactive component and enhance selectivities.

In Reactive Ion Beam Etching (RIBE) and Chemically Assisted Ion Beam Etching (CAIBE) modes, reactive species are added (CHF3, SF6, N2, O2, etc.) to the source (RIBE) or to the gas ring (CAIBE) to increase volatility of etch products and selectivity to the mask material.

ion beam figuring machine for ultra-precision silicon spheres correction - sciencedirect

Development of a new ion beam figuring machine for ultra-precision machining of silicon spheres for Avogadro project.Concept for alignment procedure for sphere machining.Development of dwell time calculation for deterministic machining.

In the framework of the Avogadro project, isotopically enriched 28Si spheres had been manufactured as artifacts for the assessment of various physical quantities including the sphere volume which finally leads to a very accurate determination of the Avogadro constant NA. The Avogadro constant is an important input datum for the redefinition of the unit of mass, the kilogram, on the basis of fundamental physical constants. During the recent measurement campaign, it has turned out that one of the main contributions to the overall uncertainty of NA is the sphericity error and consequently the interferometric volume measurement. Since chemicalmechanical polishing has reached its limits with respect to form accuracy due to the sensitivity of material removal rate to crystal orientation, it has been proposed to use ion beam figuring for further reduction of sphericity error from currently 50nm PV to values <10nm PV. In this paper, a new concept and realization of a multi-axis ion beam figuring machine dedicated for deterministic correction of silicon spheres is presented. Aspects of long term tool stability and alignment procedures in order to relate the ion beam footprint to the sphere surface are covered. Furthermore, a process dwell time calculation and tool path generation method dedicated for spheres manufacturing will be presented and discussed.

ion milling system im4000plus : hitachi high-tech in america

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The IM4000Plus Ion Milling System utilizes a broad, low-energy Ar+ ion beam milling method to produce wider, undistorted cross-section milling or flat milling, without applying mechanical stress to the sample.

Previously two separate systems were needed to perform both cross section cutting (E-3500) and wide-area sample surface fine polishing (IM3000), but with Hitachi's IM4000Plus, both applications can be run within the same machine.

Furthermore, with an increase in the maximum milling rate to 500 m/h for Si, the new Ar ion gun design of the IM4000Plus enables a reduction of cross section processing times by as much as 66% compared to the previous IM4000.

In addition, the entire sample stage of the IM4000Plus can be removed for convenience when setting specimen and fine positioning a cross section cutting edge using an external high-resolution optical microscope.

Conventional mechanical polishing or cutting techniques on soft, composite materials apply significant lateral sheer forces to the sample and often result in cross-section surface artifacts such as scratches, smearing, wash-out of softer materials, delamination and other damage. In contrast, ion beam sputtering is a stress-free physical process whereby atoms are ejected from a target material due to bombardment of the target by energized particles. Mirror-surface quality cross sections are created by forming an ion beam resistant mask on a sample surface in such way that one half of the vertically incident ion beam is blocked by the mask. The other half of the ion beam gradually removes the sample material protruding from the mask, and as a result, a straight cross sectional plain is formed below the edge of the protective mask.

The range of materials and samples that can be subjected to ion cross section milling is not limited to hard matter. In fact, high-quality sectioning can be achieved with the IM4000Plus even with "soft" samples such as paper, polymers, and powders.

The wide, polished areas can be achieved as the sample rotation (or swing) center axis is shifted from the ion beam center, thereby compensating the intensity distribution of the ion beam profile. A variable beam incidence angle (freely selectable from vertical to glancing incidence) allows both a perfect smoothing - for example in preparation for EBSD analysis - or a selective enhancement of specimen surface features (relief milling) for optimized SEM observation.

A high-resolution optical microscope is optionally available with the IM4000Plus to enable live observation of the cross section cutting area through a window in the processing chamber. This supports the user in various tasks such as deciding the end point of sample milling when dealing with unknown materials.

The IM4000Plus Series Ion-Milling Systems are the second-generation of IM4000 series hybrid instruments that support Cross-Section Milling and Flatmilling. A wide variety of system configurations are available: Standard, Cooling, Air Protection, and Cooling & Air Protection.

The cryogenic versions of the and IM4000Plus provide active cooling of the cross section milling stage during sample processing. A liquid nitrogen dewar is connected to the cross section stage to effectively remove ion beam milling induced heat from the shielding mask and sample.

The Cryo Temperature Controller (CTC) allows the user to set a desired cooling temperature during the milling process. This is achieved by placing a heater and temperature sensor directly at the cross section shielding mask so that any desired process temperature can be accurately maintained.

Sample cooling can support damage-free cross section milling of highly temperature sensitive specimen such as polymers or soft metals. However, even with active cooling applied, it is important to choose proper processing parameters, especially for samples with low thermal conductivity, because the heat generated at the direct impact point of the ion beam must first be effectively conducted to the cooled parts embedded in the specimen. The IM4000Plus with CTC provides high ion beam currents even at lower "gentle" accelerating voltages, and is therefore optimally suited for this type of work.

For occasional temperature-sensitive applications, an optionally available pre-cooled heat sink block can be easily attached to the cross section milling stage of the standard IM4000Plus unit. By pre-chilling this cooling block in a freezer prior to starting milling, samples can be effectively cooled during the typical short processing times in IM4000Plus.

Advanced materials - especially those related to Lithium battery research - require strict protection from the atmosphere during transfer from cross sectional preparation to analysis through SEM. IM4000Plus air protect is a retrofittable solution for IM4000Plus instruments that allows samples prepared and encapsulated under protective atmospheric conditions to be loaded in a glove box and then into the IM4000Plus and to be exported under vacuum conditions after cross section milling.

A manipulator mechanism attached to the viewing window on top of the specimen chamber allows sealed sample capsules to be opened after IM4000Plus evacuation, and to be re-encapsulated prior to chamber venting. Standard capsules can be directly transferred into the air protect specimen exchange chambers, which are optionally available for all Hitachi FE-SEM Original encapsulation of samples to be ion milled is supported by a fully mechanical fit type holder-and-shielding mask mechanism, which eliminates the fine mechanical setting and adjustment tasks that are usually hard to accomplish wearing thick rubber gloves inside a glove box.

The application picture below shows the importance of such air protected sample preparation work. In this example, a negative electrode of a Li ion battery is first observed under air protected transfer to the SEM, and then observed a second time after 10 minutes of exposure to the room atmosphere.